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  cy62256vn 256-kbit (32 k 8) static ram cypress semiconductor corporation ? 198 champion court ? san jose , ca 95134-1709 ? 408-943-2600 document number: 001-06512 rev. *f revised september 13, 2013 256-kbit (32 k 8) static ram features temperature ranges ? commercial: 0 c to +70 c ? industrial: ?40 c to +85 c ? automotive-a: ?40 c to +85 c ? automotive-e: ?40 c to +125 c speed: 70 ns low voltage range: 2.7 v to 3.6 v low active power and standby power easy memory expansion with ce and oe features ttl compatible inputs and outputs automatic power-down when deselected cmos for optimum speed and power available in standard pb-free and non pb-free 28-pin (300-mil) narrow soic, 28-pin tsop-i, and 28-pin reverse tsop-i packages functional description the cy62256vn family is composed of two high performance cmos static ram?s organized as 32k words by 8 bits. easy memory expansion is provided by an active low chip enable (ce ) and active low output enable (oe ) and tristate drivers. these devices have an automatic power-down feature, reducing the power consumption by over 99% when deselected. an active low write enable signal (we ) controls the writing/reading operation of the memory. when ce and we inputs are both low, data on the eight data input/output pins (i/o 0 through i/o 7 ) is written into the memory location addressed by the address present on the address pins (a 0 through a 14 ). reading the device is accomplished by selecting the device and enabling the outputs, ce and oe active low, while we remains inactive or high. under these conditions, the contents of the location addressed by the information on address pins are present on the eight data input/output pins. the input/output pins remain in a high impedance state unless the chip is selected, outputs are enabled, and write enable (we ) is high. a 9 a 8 a 7 a 6 a 5 a 4 a 3 a 2 column decoder row decoder sense amps inputbuffer power down we oe i/o 0 ce i/o 1 i/o 2 i/o 3 32k x 8 arra y i/o 7 i/o 6 i/o 5 i/o 4 a 10 a 13 a 11 a 12 a a 14 a 1 0 logic block diagram
cy62256vn document number: 001-06512 rev. *f page 2 of 17 contents product portfolio .............................................................. 3 pin configurations ........................................................... 3 pin definitions .................................................................. 3 maximum ratings ............................................................. 4 operating range ............................................................... 4 electrical characteristics ................................................. 4 capacitance ...................................................................... 5 thermal resistance .......................................................... 5 ac test loads and waveforms ....................................... 5 data retention characteristics ....................................... 6 data retention waveform ................................................ 6 switching characteristics ................................................ 7 switching waveforms ...................................................... 8 typical dc and ac characteristics .............................. 10 truth table ...................................................................... 11 ordering information ...................................................... 12 ordering code definitions ..... .................................... 12 package diagrams .......................................................... 13 acronyms ........................................................................ 15 document conventions ................................................. 15 units of measure ....................................................... 15 document history page ................................................. 16 sales, solutions, and legal information ...................... 17 worldwide sales and design s upport ......... .............. 17 products .................................................................... 17 psoc? solutions ...................................................... 17 cypress developer community ................................. 17 technical support ................. .................................... 17
cy62256vn document number: 001-06512 rev. *f page 3 of 17 product portfolio product range v cc range (v) power dissipation operating, i cc (ma) standby, i sb2 ( ? a) min typ [1] max typ [1] max typ [1] max cy62256vnll commercial 2.7 3.0 3.6 11 30 0.1 5 cy62256vnll industrial 2.7 3.0 3.6 11 30 0.1 10 cy62256vnll automotive-a 2.7 3.0 3.6 11 30 0.1 10 cy62256vnll automotive-e 2.7 3.0 3.6 11 30 0.1 130 pin configurations figure 1. 28-pin soic and 28-pin tsop i pinouts 1 2 3 4 5 6 7 8 9 10 11 14 15 16 20 19 18 17 21 24 23 22 top view narrow soic 12 13 25 28 27 26 gnd a 6 a 7 a 8 a 9 a 10 a 11 a 12 a 13 we v cc a 4 a 3 a 2 a 1 i/o 7 i/o 6 i/o 5 i/o 4 a 14 a 5 i/o 0 i/o 1 i/o 2 ce oe a 0 i/o 3 22 23 24 25 26 27 28 1 2 5 10 11 15 14 13 12 16 19 18 17 3 4 20 21 7 6 8 9 oe a 1 a 2 a 3 a 4 we v cc a 5 a 6 a 7 a 8 a 9 a 0 ce i/o 7 i/o 6 i/o 5 gnd i/o 2 i/o 1 i/o 4 i/o 0 a 14 a 10 a 11 a 13 a 12 i/o 3 tsop i top view (not to scale) reverse pinout 22 23 24 25 26 27 28 1 2 5 10 11 15 14 13 12 16 19 18 17 3 4 20 21 7 6 8 9 oe a 1 a 2 a 3 a 4 we v cc a 5 a 6 a 7 a 8 a 9 a 0 ce i/o 7 i/o 6 i/o 5 gnd i/o 2 i/o 1 i/o 4 i/o 0 a 14 a 10 a 11 a 13 a 12 i/o 3 tsop i top view (not to scale) pin definitions pin number type description 1?10, 21, 23?26 input a 0 ?a 14 . address inputs 11?13, 15?19 input/output i/o 0 ?i/o 7 . data lines. used as input or output lines depending on operation. 27 input/control we . when selected low, a write is conducted. when selected high, a read is conducted. 20 input/control ce . when low, selects the chip. when high, deselects the chip. 22 input/control oe . output enable. controls the direction of the i/o pins. when low, the i/o pins behave as outputs. when deasserted high, i/o pins are tristated, and act as input data pins. 14 ground gnd . ground for the device 28 power supply v cc . power supply for the device note 1. typical values are included for reference only and are not guaranteed or tested. typical values are measured at v cc = v cc typ, t a = 25 c, and t aa = 70 ns.
cy62256vn document number: 001-06512 rev. *f page 4 of 17 maximum ratings exceeding maximum ratings may shorten the useful life of the device. user guidelines are not tested. storage temperature .. ............... ............... ?65 c to +150 c ambient temperature with power applied ............ ............... ............... ?55 c to +125 c supply voltage to ground potential (pin 28 to pin 14) ..........................................?0.5 v to +4.6 v dc voltage applied to outputs in high z state [2] ................................ ?0.5 v to v cc + 0.5 v dc input voltage [2] ............................. ?0.5 v to v cc + 0.5 v output current into outputs (low) ............................. 20 ma static discharge voltage (per mil-std-883, method 3015) .............. ........... > 2001 v latch-up current ................................................... > 200 ma operating range device range ambient temperature (t a ) [3] v cc cy62256vn commercial 0 c to +70 c 2.7 v to 3.6 v industrial ?40 c to +85 c automotive-a ?40 c to +85 c automotive-e ?40 c to +125 c electrical characteristics over the operating range parameter description test conditions -70 unit min typ [4] max v oh output high voltage i oh = ? 1.0 ma v cc = 2.7 v 2.4 ? ? v v ol output low voltage i ol = 2.1 ma v cc = 2.7 v ? ? 0.4 v v ih input high voltage 2.2 ? v cc + 0.3 v v il input low voltage ?0.5 ? 0.8 v i ix input leakage current gnd ? v in ? v cc commercial/ industrial/ automotive-a ?1 ? +1 ? a automotive-e ?10 ? +10 ? a i oz output leakage current gnd ? v in ? v cc , output disabled commercial/ industrial/ automotive-a ?1 ? +1 ? a automotive-e ?10 ? +10 ? a i cc v cc operating supply current v cc = 3.6 v, i out = 0 ma, f = f max = 1/t rc all ranges ? 11 30 ma i sb1 automatic ce power-down current - ttl inputs v cc = 3.6 v, ce ? v ih , v in ? v ih or v in ? v il , f = f max all ranges ? 100 300 ? a i sb2 automatic ce power-down current - cmos inputs v cc = 3.6 v, ce ? v cc ? 0.3 v, v in ? v cc ? 0.3 v or v in ? 0.3 v, f = 0 commercial ? 0.1 5 ? a industrial/ automotive-a ?10 automotive-e ? 130 notes 2. v il (min) = ?2.0 v for pulse durations of less than 20 ns. 3. t a is the ?instant-on? case temperature. 4. typical values are included for reference only and are not guaranteed or tested. typical values are measured at v cc = v cc typ, t a = 25 c, and t aa = 70 ns.
cy62256vn document number: 001-06512 rev. *f page 5 of 17 capacitance parameter [5] description test conditions max unit c in input capacitance t a = 25 c, f = 1 mhz, v cc = 3.0 v 6 pf c out output capacitance 8pf thermal resistance parameter [5] description test conditions soic tsopi rtsopi unit ? ja thermal resistance (junction to ambient) still air, soldered on a 3 4.5 inch, two-layer printed circuit board 68.45 87.62 87.62 ? c/w ? jc thermal resistance (junction to case) 26.94 23.73 23.73 ? c/w ac test loads and waveforms figure 2. ac test loads and waveforms ? ? v cc v cc output r2 50 pf including jig and scope gnd 90% 10% 90% 10% 5ns 5 ns output v th equivalent to: th venin equivalent all input pulses r1 r th parameter value units r1 1100 ohms r2 1500 ohms rth 645 ohms vth 1.750 volts note 5. tested initially and after any design or proc ess changes that may affect these parameters.
cy62256vn document number: 001-06512 rev. *f page 6 of 17 data retention characteristics over the operating range parameter description conditions [6] min typ [7] max unit v dr v cc for data retention 1.4 ? ? v i ccdr data retention current v cc = 1.4 v, ce ? v cc ? 0.3 v, v in ? v cc ? 0.3 v or v in ? 0.3 v commercial ? 0.1 3 ? a industrial/ automotive-a ?6 automotive-e ? 50 t cdr [6] chip deselect to data retention time 0??ns t r [8] operation recovery time 70 ? ? ns data retention waveform figure 3. data retention waveform 1.8 v 1.8 v t cdr v dr ? 1.4 v data retention mode t r ce v cc notes 6. no input may exceed v cc + 0.3 v. 7. typical values are included for reference only and are not guaranteed or tested. typical values are measured at v cc = v cc typ, t a = 25 c, and t aa = 70 ns. 8. tested initially and after any design or process changes that may affect these parameters.
cy62256vn document number: 001-06512 rev. *f page 7 of 17 switching characteristics over the operating range parameter [9] description cy62256vn-70 unit min max read cycle t rc read cycle time 70 ? ns t aa address to data valid ? 70 ns t oha data hold from address change 10 ? ns t ace ce low to data valid ? 70 ns t doe oe low to data valid ? 35 ns t lzoe oe low to low z [10] 5 ? ns t hzoe oe high to high z [10, 11] ? 25 ns t lzce ce low to low z [10] 10 ? ns t hzce ce high to high z [10, 11] ? 25 ns t pu ce low to power-up 0 ? ns t pd ce high to power-down ? 70 ns write cycle [12, 13] t wc write cycle time 70 ? ns t sce ce low to write end 60 ? ns t aw address setup to write end 60 ? ns t ha address hold from write end 0 ? ns t sa address setup to write start 0 ? ns t pwe we pulse width 50 ? ns t sd data setup to write end 30 ? ns t hd data hold from write end 0 ? ns t hzwe we low to high z [10, 11] ? 25 ns t lzwe we high to low z [10] 10 ? ns notes 9. test conditions assume signal transition time of 5 ns or less timing reference levels of v cc /2, input pulse levels of 0 to v cc , and output loading of the specified i ol /i oh and 100-pf load capacitance. 10. at any temperature and voltage condition, t hzce is less than t lzce , t hzoe is less than t lzoe , and t hzwe is less than t lzwe for any device. 11. t hzoe , t hzce , and t hzwe are specified with c l = 5 pf as in (b) of ac test loads. transition is measured 200 mv from steady-state voltage. 12. the internal write time of the memory is defined by the overlap of ce low and we low. both signals must be low to initiate a write and either signal can terminate a write by going high. the data input set-up and hold timing shoul d be referenced to the rising edge of the signal that termina tes the write. 13. the minimum write cycle time for write cycle #3 (we controlled, oe low) is the sum of t hzwe and t sd .
cy62256vn document number: 001-06512 rev. *f page 8 of 17 switching waveforms figure 4. read cycle no. 1 [14, 15] figure 5. read cycle no. 2 [15, 16] figure 6. write cycle no. 1 (we controlled) [17, 18, 19] address data out previous data valid data valid t rc t aa t oha 50% 50% data valid t rc t ace t doe t lzoe t lzce t pu data out high impedance impedance icc isb t hzoe t hzce t pd oe ce high v cc supply current t hd t sd t pwe t sa t ha t aw t wc data i/o address ce we oe t hzoe data in valid note 20 notes 14. device is continuously selected. oe , ce = v il . 15. we is high for read cycle. 16. address valid prior to or coincident with ce transition low. 17. the internal write time of the memory is defined by the overlap of ce low and we low. both signals must be low to initiate a write and either signal can terminate a write by going high. the data input set-up and hold timing shou ld be referenced to the rising edge of the signal that termina tes the write. 18. data i/o is high impedance if oe = v ih . 19. if ce goes high simultaneously with we high, the output remains in a high impedance state. 20. during this period, the i/os are in output state and input signals should not be applied.
cy62256vn document number: 001-06512 rev. *f page 9 of 17 figure 7. write cycle no. 2 (ce controlled) [21, 22, 23] figure 8. write cycle no. 3 (we controlled, oe low) [23, 24] switching waveforms (continued) t wc t aw t sa t ha t hd t sd t sce we data i/o address ce data in valid data i/o address t hd t sd t lzwe t sa t ha t aw t wc t hzwe data in valid note 25 we ce notes 21. the internal write time of the memory is defined by the overlap of ce low and we low. both signals must be low to initiate a write and either signal can terminate a write by going high. the data input set-up and hold timing shoul d be referenced to the rising edge of the signal that termina tes the write. 22. data i/o is high impedance if oe = v ih . 23. if ce goes high simultaneously with we high, the output remains in a high impedance state. 24. the minimum write cycle time for write cycle #3 (we controlled, oe low) is the sum of t hzwe and t sd . 25. during this period, the i/os are in output state and input signals should not be applied.
cy62256vn document number: 001-06512 rev. *f page 10 of 17 typical dc and ac characteristics 1.6 1.8 1.0 0.6 0.4 0.2 1.6 1.4 1.2 1.0 0.8 ? 55 25 125 ? 55 25 125 1.2 1.0 0.8 normalized t aa ?14 ?12 ?10 ?8 ?6 ?4 0.0 1.0 1.5 22.5 output source current (ma) supply voltage (v) normalized supply current vs. supply voltage ambient temperature ( ? c) vs. ambient temperature ambient temperature ( ? c) output voltage (v) 0.8 1.5 1.0 0.5 1.65 2.1 2.6 3.1 3.6 normalized t aa supply voltage (v) normalized access time 6 4 2 0.0 1.0 2.0 3.0 output sink current (ma) 0 output voltage (v) output sink current vs. output voltage 0.6 0.4 0.2 0.0 normalized i cc normalized i cc t a = 25 ? c 0.6 0.0 0 2.5 2.0 t a = 25 ? c 1.4 ? 55 25 105 2.5 2.0 1.5 ambient temperature ( ? c) 1.0 0.5 0.0 ?0.5 i sb 3.0 standby current i sb2 ? a v cc = 3.0v v c c = 3 . 3v 1.6 1.8 2.0 2.4 2.8 3.2 3.6 1.4 1.2 v cc = 3.0v 0.5 8 10 12 14 t a = 25c t a = 25c normalized supply current vs. ambient temperature vs. supply voltage normalized access time vs. ambient temperature output source current vs. output voltage
cy62256vn document number: 001-06512 rev. *f page 11 of 17 typical dc and ac characteristics (continued) 30.0 25.0 20.0 15.0 10.0 5.0 0 200 400 600 800 delta t (ns) aa capacitance (pf) typical access time change vs. output loading 1.25 1.00 0.75 10 20 30 normalized i cc cycle frequency (mhz) normalized i cc vs. cycle time 0.0 1000 0.50 t a = 25 ? c v in = 0.5v 1 v cc = 3.0v t a = 25 ? c v cc = 3v truth table ce we oe inputs/outputs mode power h x x high z deselect/power-down standby (i sb ) l h l data out read active (i cc ) l l x data in write active (i cc ) l h h high z deselect, output disabled active (i cc )
cy62256vn document number: 001-06512 rev. *f page 12 of 17 ordering code definitions ordering information speed (ns) ordering code package diagram package type operating range 70 cy62256vnll-70zxc 51-85071 28-pin tsop i (pb-free) commercial cy62256vnll-70snxi 51-85092 28-pin snc (300 mils) narrow body (pb-free) industrial cy62256vnll-70zxi 51-85071 28-pin tsop i (pb-free) cy62256vnll-70zrxi 51-85074 28-pin reverse tsop i (pb-free) cy62256vnll-70snxe 51-85092 28-pin snc (300 mils) narrow body (pb-free) automotive-e cy62256vnll-70zxe 51-85071 28-pin tsop i (pb-free) temperature grade: x = c or i or e c = commercial = 0 c to +70 c; i = industrial = ?40 c to +85 c; e = automotive-e = ?40 c to +125 c package type: xxx = zx or snx or zrx zx = 28-pin tsop i (pb-free) snx = 28-pin snc (pb-free) zrx = 28-pin reverse tsop i (pb-free) speed grade: 70 ns low power nitride seal mask fix voltage range (3 v typical) density: 256 kbit family code: mobl sram family company id: cy = cypress vn -70 x xxx ll cy 256 62
cy62256vn document number: 001-06512 rev. *f page 13 of 17 package diagrams figure 9. 28-pin snc (300 mils) sn28.3 (narrow body) package outline, 51-85092 figure 10. 28-pin tsop 1 (8 13.4 1.2 mm) z28 (standard) package outline, 51-85071 51-85092 *e 51-85071 *i
cy62256vn document number: 001-06512 rev. *f page 14 of 17 figure 11. 28-pin tsop i (8 13. 4 mm) package outline - reverse, 51-85074 package diagrams 51-85074 *g
cy62256vn document number: 001-06512 rev. *f page 15 of 17 acronyms document conventions units of measure acronym description cmos complementary metal oxide semiconductor i/o input/output sram static random access memory tsop thin small outline package vfbga very fine-pitch ball grid array symbol unit of measure c degree celsius ? a microampere ma milliampere mhz megahertz ns nanosecond ? ohm pf picofarad v volt w watt
cy62256vn document number: 001-06512 rev. *f page 16 of 17 document history page document title: cy62256vn, 256-kbit (32 k 8) static ram document number: 001-06512 revision ecn orig. of change submission date description of change ** 426504 nxr see ecn new data sheet *a 488954 nxr see ecn added automotive product updated ordering information table *b 2769239 vkn / aesa 09/25/09 corrected v il description in the electrical characteristics table *c 2901521 aju 03/30/2010 removed inactive parts from ordering information. updated package diagram. *d 3119519 aju 01/04/2011 updated ordering information . added ordering code definitions . *e 3329873 rame 07/27/11 updated template and styl es according to current cypress standards. added acronyms and units. removed reference to an1064 sram system guidelines. updated operation recovery time parameter under data retention characteristics on page 6 . *f 4122787 vini 09/13/2013 updated package diagrams : spec 51-85092 ? changed revision from *c to *e. updated in new template. completing sunset review.
document number: 001-06512 rev. *f revised september 13, 2013 page 17 of 17 all products and company names mentioned in this document may be the trademarks of their respective holders. cy62256vn ? cypress semiconductor corporation, 2006-2013. the information contained herein is subject to change without notice. cypress s emiconductor corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a cypress product. nor does it convey or imply any license under patent or other rights. cypress products are not warranted nor intended to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement wi th cypress. furthermore, cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. the inclusion of cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies cypress against all charges. any source code (software and/or firmware) is owned by cypress semiconductor corporation (cypress) and is protected by and subj ect to worldwide patent protection (united states and foreign), united states copyright laws and internatio nal treaty provisions. cypress hereby grants to licensee a personal, non-exclusive, non-transferable license to copy, use, modify, create derivative works of, and compile the cypress source code and derivative works for the sole purpose of creating custom software and or firmware in su pport of licensee product to be used only in conjunction with a cypress integrated circuit as specified in the applicable agreement. any reproduction, modification, translation, compilation, or repre sentation of this source code except as specified above is prohibited without the express written permission of cypress. disclaimer: cypress makes no warranty of any kind, express or implied, with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose. cypress reserves the right to make changes without further notice to t he materials described herein. cypress does not assume any liability arising out of the application or use of any product or circuit described herein. cypress does not authori ze its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. the inclusion of cypress? prod uct in a life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies cypress against all charges. use may be limited by and subject to the applicable cypress software license agreement. sales, solutions, and legal information worldwide sales and design support cypress maintains a worldwide network of offices, solution center s, manufacturer?s representatives, and distributors. to find t he office closest to you, visit us at cypress locations . products automotive cypress.co m/go/automotive clocks & buffers cypress.com/go/clocks interface cypress. com/go/interface lighting & power control cypress.com/go/powerpsoc cypress.com/go/plc memory cypress.com/go/memory psoc cypress.com/go/psoc touch sensing cyp ress.com/go/touch usb controllers cypress.com/go/usb wireless/rf cypress.com/go/wireless psoc ? solutions psoc.cypress.com/solutions psoc 1 | psoc 3 | psoc 4 | psoc 5lp cypress developer community community | forums | blogs | video | training technical support cypress.com/go/support


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